Journal of Material Sciences & Engineering

Effect of Gamma Irradiation on Photoelectric Parameters of Double-Barrier Structure Based on Silicon

Abstract

Abasov FP

Developed a silicon-based photodetector with high sensitivity integrated in the short range. The influence of gamma radiation on the mechanism of current flow in the structure type Schottky barrier, and the p-n junctions. It is shown that the double-barrier structure can improve the photoelectric parameters of conventional detectors.