Journal of Material Sciences & Engineering

Graphene/Fluorinated Graphene Systems for a Wide Spectrum of Electronics Application

Abstract

Irina V Antonova, Kotin IA, Kurkina II, Ivanov AI, Yakimchuk EA, Nebogatikova NA, Vdovin VI, Gutakovskii AK and Soots RA

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree, composite graphene:PEDOT:PSS layers were shown. Extraordinary properties of FG as an insulating layer for graphene-based heterostructures at fluorination degree above 30% were demonstrated. It is shown that the leakage current in thin (20-40 nm) films is normally smaller than 10-8 A/cm2, the breakdown field being greater than 108 V/cm. In hybrid structures with printed FG layers in which graphene was transferred onto, or capsulated with, an FG layer, an increase in charge-carrier mobility and material conductivity amounting to 5-6 times was observed. The spectrum of future applications of FG layers can be further extended due to the possibility of obtaining, from weakly fluorinated graphene (<20%), functional layers exhibiting a negative differential resistance behavior and, at fluorination degrees of 20-23%, field-effect-transistor channels with current modulation reaching several orders. Composite or bilayer films based on fluorographene and V2O5 or polyvinyl alcohol exhibit a stable resistive switching behavior. On the whole, graphene/FG heterostructures enjoy huge potential for their use in a wide spectrum of application, including flexible electronics.