Institute of Semiconductor Physics, Russian Academy of Sciences,
Novosibirsk
Serbia
Research Article
Graphene/Fluorinated Graphene Systems for a Wide Spectrum of
Electronics Application
Author(s): Irina V Antonova, Kotin IA, Kurkina II, Ivanov AI, Yakimchuk EA, Nebogatikova NA, Vdovin VI, Gutakovskii AK and Soots RAIrina V Antonova, Kotin IA, Kurkina II, Ivanov AI, Yakimchuk EA, Nebogatikova NA, Vdovin VI, Gutakovskii AK and Soots RA
Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree, composite graphene:PEDOT:PSS layers were shown. Extraordinary properties of FG as an insulating layer for graphene-based heterostructures at fluorination degree above 30% were demonstrated. It is shown that the leakage current in thin (20-40 nm) films is normally smaller than 10-8 A/cm2, the breakdown field being greater than 108 V/cm. In hybrid structures with printed FG layers in which graphene was transferred onto, or capsulated with, an FG layer, an increase in charge-carrier mobility and material conductivity amounting to 5-6 times was observed. The spectrum of future applications of FG layers can be further extended due to the possibility of obtaini.. Read More»
DOI:
10.4172/2169-0022.1000379
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report