Journal of Material Sciences & Engineering

Najafov BA

Publications

• Research Article
  Determining the Amount of Hydrogen in Thin Films Well Si_1-xGe_x: H (X = 0 ÷ 1) for Electronic Devices
  Author(s): Najafov BA and RussiaNajafov BA and Russia
  
  Possibilities of plasma chemical deposition of �?�?°-Si1-xGex:H (x=0 ÷ 1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in p-i-n structures of solar cell. The optical properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in �?�?°-Si:H and �?�?°-Ge:H films is measured. The �?�?°-Si:H and �?�?°-Si0,88Ge1,2:H films were used to fabricate three-layer solar with an element area of 13 sm2 and an efficiency (ξ) of 9.5%... Read More»
  DOI: 10.4172/2169-0022.1000295

  Abstract PDF