Academy of the Ministry of Internal Affairs of the Republic of Uzbekistan,
Tashkent
Uzbekistan
Perspective
Decay of Impurity Nano-inclusions of Cobalt in Silicon under the Influence of Thermal Annealing
Author(s): Nozim TurgunovNozim Turgunov
The influence of a thermoannealing on electrical conduction of silicon monocrystals doped by cobalt has been studied. Also, analysis of sequence of the impurity nanoinclusion’s disinteration under influence of thermoannealing has been carried out by the method of electron-probe microanalysis... Read More»
DOI:
10.4172/2169-0022.1000458
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report
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