Tanzania
Research Article
Terahertz Spectroscopic Analysis and Multispectral Imaging of Epitaxially Grown Semiconductors with Nanometer Resolution
Author(s): Anis Rahman and Rahman AKAnis Rahman and Rahman AK
Terahertz spectral analysis has been conducted on epitaxially grown semiconductor structures. Epitaxially grown semiconductors are important for microelectronic and optoelectronic devices and also for integrated circuits fabricated using semiconductors. In this paper, we report results of terahertz time-domain spectroscopy of grown SiGe layers on Ge buffer and separately a Ge buffer that was grown on a Si <001> wafer. In particular, evolution of the time-domain spectra as a function of thickness of both samples was investigated by the terahertz pump-probe technique. Representative spectra were analyzed to determine the respective layers’ spectral signatures. It was found that the spectroscopic analysis uniquely identified different layers by characteristic absorbance peaks. In addition, terahertz imaging was conducted in a non-destructive, non-contact mode for detecting la.. Read More»
DOI:
10.4172/2155-6210.1000229
Biosensors & Bioelectronics received 6207 citations as per Google Scholar report