Global Journal of Technology and Optimization

Saligram R

Publications

• Research Article
  Mitigating the Impact of NBTI and PBTI Degradation
  Author(s): Bairy B, Craig TS, Eshaghian-Wilner MM, Gonde K, Gupta N, Prajogi A and Saligram RBairy B, Craig TS, Eshaghian-Wilner MM, Gonde K, Gupta N, Prajogi A and Saligram R
  
  Modern CMOS devices encounter a major problem that alters the threshold voltages of the NMOS and PMOS. Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are common ageing phenomena observed in PMOS and NMOS devices, respectively. Due to operating temperature and stress time, NBTI and PBTI create a decrease in drain-to-source current and an increase in propagation delay. Threshold voltage is an important parameter due to exponential dependence on delay and leakage power. Threshold voltage variations produce adverse effects on operation frequency. These phenomena accrue in pull-up/pull-down transistors in stack and vastly degrade CMOS performance. This paper discusses the various factors responsible for NBTI and PBTI and the challenges associated with modeling these effects due to the recovery mechanism exhibited by the transistors when the st.. Read More»
  

  Abstract PDF