Journal of Material Sciences & Engineering

Wen-Hsi Lee

Publications

• Research Article
  Effect of Two-Step Ion Implantation and Microwave Annealing on Dopants Activation in Silicon-Germanium
  Author(s): Tai-Chen Kuo, Chao-Yi Lin and Wen-Hsi LeeTai-Chen Kuo, Chao-Yi Lin and Wen-Hsi Lee
  
  The strain engineering of the source/drain has been applied from the N45 till now. When the size of the transistor is reduced continuously, it is necessary to increase the germanium concentration to add more stress, but it reduces boron concentration with increasing the germanium. The use of ion implantation compensates for the boron concentration well, while caused some problems, including ion implantation damage, diffusion, and activation of dopant ions. Therefore, to activate dopants by tuning different Ge content or pre-amorphized implantation. In the meantime, in order to cope with the low-temperature process for Ge, microwave annealing was added to compare with rapid thermal annealing. In this paper, silicon germanium film covered with Si, Ge and uncovered before ion implantation is investigated. The sample deposit with Ge capping layer undergoes surface loss after annea.. Read More»
  

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