Journal of Electrical & Electronic Systems

Department of Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China

Publications

• Review Article   
  A Review on Nano-Electronics
  Author(s): Gongyu Jiang*
  
  Nanoelectronics alludes to the utilization of nanotechnology in electronic parts. The term covers a different arrangement of gadgets and materials, with the normal trademark that they are little to such an extent that between nuclear connections and quantum mechanical properties should be concentrated widely. A portion of these up-and-comers include: crossover sub-atomic/semiconductor hardware, one-layered nanotubes/nanowires (for example silicon nanowires or carbon nanotubes) or high level atomic hardware. Nanoelectronic gadgets have basic aspects with a size range between 1 nm and 100 nm. Ongoing silicon MOSFET (metal-oxide-semiconductor field-impact semiconductor, or MOS semiconductor) innovation ages are now inside this system, including 22 nanometers CMOS (correlative MOS) hubs and succeeding 14 nm, 10 nm and 7 nm FinFET (blade field-impact semiconductor) ages.. Read More»
  DOI: 10.37421/2332-0796.2022.11.21

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