Department of Mechanical Systems Engineering, Tokyo City University, 1-28-1 Tamazatsumi, Setagaya-ku, Tokyo, Japan
Review Article
Estimation of Insulating Materials for Semiconductor Power Device using DC Current Integrated Charge Measurement
Author(s): Yasuhiro Tanaka*, Kimio Hijikata and Hiroaki Miyake
A principle of “DC current integrated charge measurement method”, which is usually called as “Q(t) method” for simplicity, and some typical measurement results obtained using the Q(t) method are introduced in this paper. The Q(t) method is used for estimation of insulating properties of materials at various temperature under various DC electric field, while the measurement system for it is simple and not so expensive. Furthermore, since the method is applicable to variously shaped insulating materials, it is useful for various electric and electronic devices. Recently, some semiconductor power devices using some newly developed semiconductor like SiC or GaN, which work at high temperature under high electric stress, are developed for actual use driver circuits of electric vehicles and trains. To draw their authentic power at the higher temperature under the hig.. Read More»
DOI:
10.37421/bset.2021.S1.002