Departement de Physique, Instituto de Micro y Nanotecnología CNM, Spain
Research
Effect of Gamma Radiation on New Promising Quaternary Cu2lnsns4 Semiconductor: Transformation via Hydrophobic To Hydrophilic Surface for Controlled Photocatalytic Performance
Author(s): Chayma Nefzi*, Bechir yahmadi, Nizar el Guesmi, Jorge M. Garcia and Najoua Kamoun-Turki
The present work highlights the influence of gamma-radiation on Cu2InSnS4 (CITS) thin films deposited by spray pyrolysis technique. Irradiation treatment was carried out by different doses (20-40-60-80 and 100 kGy) of γ-radiation using Co60 as source. The physical investigations of samples were demonstrated using energy dispersive X-ray spectrometry (EDX), X-ray diffraction (XRD), Maud software, scanning electron microscopy (SEM), Spectrophotometer and Drop Shape Analysis System. Firstly, XRD patterns reveal a decrement in peak intensities followed by the division of peaks related to (204) and (312) lattice plans after gamma-radiation. All films were crystalized into stannite structure and the crystallites were orientated towards (112) plan. Secondly, EDX spectroscopy reflects an appreciably decrease in Cu, In, Sn and S contents. SEM micrographs clearly show a total morphologica.. Read More»
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report