Kui-juan Jin1,2, Le Wang1, Jun-xing Gu1, Chao Ma1, Xu He1, Jiandi Zhang3, Can Wang1, Yu Feng1, Qian Wan1, Jin-an Shi1, Lin Gu1, Meng He1, Hui-bin Lu1 and Guo-zhen Yang1,2
1Chinese Academy of Sciences, China 2Collaborative Innovation Center of Quantum Matter, China 3Louisiana State University, USA
Posters-Accepted Abstracts: J Material Sci Eng
Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability, nondestructive readout and high intensity storage. As a non-contact and non-destructive information readout method, surface potential has never been paid enough attention because of the unavoidable decay of the surface potential contrast between oppositelypolarized domains. That is mainly due to the recombination of the surface movable chargesaround the domain walls. Here, by introducing a laser beam into the combination of piezoresponse force microscopy and Kelvin probe force microscopy, we demonstrate that the surface potential contrastof BiFeO3 films can be recoveredunderlight illumination.The recovering mechanism is understoodbased on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on BiFeO3 films to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory.
Kui-juan Jin received her PhD degree at the Institute of Physics, CAS in 1995. She spent two years as a Postdoctoral Research Associate at the University of Tennessee /Oak Ridge National Laboratory in US. She has been Director of Optical Physics Key Lab of CAS since 2009. She was elected as a Fellow of The Institute of Physics (IOP) in 2011 and as a Fellow of The American Physical Society (APS) in 2012. She has published more than 180 research papers in SCI Journals.
Email: kjjin@iphy.ac.cn
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report