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Correlation between electron mobility and static dielectric permittivity of n-InSb
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Journal of Material Sciences & Engineering

ISSN: 2169-0022

Open Access

Correlation between electron mobility and static dielectric permittivity of n-InSb


International Conference and Exhibition on Mesoscopic & Condensed Matter Physics

June 22-24, 2015 Boston, USA

K Alfaramawi and M A Alzamil

King Saud University, Saudi Arabia

Posters-Accepted Abstracts: J Material Sci Eng

Abstract :

Numerical calculations of the static dielectric permittivity- dependent electron mobility due to different types of elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperature. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.

Biography :

Email: kalgarmawy@ksu.edu.sa

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Citations: 3677

Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report

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