Device physics and technology of correlated-electron random access memories

International Conference and Exhibition on Mesoscopic & Condensed Matter Physics

June 22-24, 2015 Boston, USA

Carlos A Paz de Araujo

University of Colorado, USA

Posters-Accepted Abstracts: J Material Sci Eng

Abstract :

Semiconductors have been one of the major accomplishments of Condensed Matter Physics. Recently, quantum restrictions have slowed down their impressive growth, especially in the memory area. In this paper, a new switch-and-store device is presented from first principles to final samples introducing a novel memory based on Strong Electron Correlations generally based on the disproportionation dn +dn = dn-1 + dn+1 common in certain Transition Metal Oxides. Similar efforts in the past 15 years, led to the so called â�?�?Filament Resistive Memories (ReRAMs)â�? which instead of exploiting the intrinsic localization (storing) and disproportionation (switching) and the well known Hubbard-Mott transition (HMT), created a paradigm of explaining away oxide breakdown and multi-layer charge trap as the consensus of ReRAMs physics. In our work, the underlying Physics of the HMT is used in a complete device model. The key technological breakthrough is a novel ligand substitution that reconstructs uncertain coordination-number and disproportionation, properly doped surfaces led to spontaneous metal- Insulator transitions with switching over 4K to 150 C and 400 C storage.

Biography :

Carlos A Paz de Araujo is a full Professor of Electrical Engineering and a fellow of IEEE. In 2006, he received the Daniel Nobel award for his work in Ferroelectric Random Access Memories, which now has surpassed 1 Billion devices in the market. His areas of interests include nonvolatile memories and oxides in general. He has over 250 patents in the US and 300 overseas. His current work in CeRAM is focused at ultra nano-scale and embedded memories.

Email: caraujo@aol.com