Dielectric properties of Ba(Zr0.4Ti0.6)O3 thin films deposited on MgO and LaAlO3 single crystal substrates

International Conference on Smart Materials & Structures

June 15 -17, 2015 Las Vegas, USA

Hyun Suk Hwang2, Feel-Soon Kang1, Yeun-Ho Joung1, Won Seok Choi1 and Hyun-Il Kang1

Posters-Accepted Abstracts: J Material Sci Eng

Abstract :

In this paper, we present the correlation between microstructure and dielectric properties of Ba(Zr0.4Ti0.6)O3 (BZT) thin films deposited by RF magnetron sputtering on MgO and LaAlO3 single crystal substrates for the microwave tunable devices application. The crystallinity and morphology of the thin films were analyzed by x-ray diffraction (XRD) and transmission electron microscopy (SEM), respectively. The dielectric constants and dielectric loss were measured from 100 Hz to 1 MHz at room temperature using a Boonton 7200 capacitance meter. The measured the maximum tunabilityof BZTthin films on MgO and LaAlO3are 48% and 52%, respectively.

Biography :

Hyun-Suk Hwang received his PhD degree from Sungkyunkwan University, Seoul, Korea,in 2007. He is the Professor of Seoil University, Seoul, Korea. He has published more than 30 papers in reputed journals and has been serving as an operation committee memberof KIEE.