Rezania, Hamed1 and Yarmohammadi Mohsen2
1University of Razi, Iran 2Institute for Advanced Studies in Basic Sciences (IASBS), Iran
Posters-Accepted Abstracts: J Material Sci Eng
We investigate the dynamical thermal conductivity (?º) of clean AA-stacked bilayer graphene sheets as a function of frequency for doping due to charging and also the effect of adding a bias across the layers. Recently increasing importance of thermal properties of materials is explained both by practical needs and fundamental science. Heat removal has become a crucial issue for continuing progress in electronic industry owing to increased levels of dissipated power. Thermal properties of materials change when they are structured on a nanometer scale. Graphene transistors and interconnects benefit from the high in-plane thermal conductivity, up to a certain channel length. According to our results, there is a maximum value in the plot of ?º versus bias potential V for various temperatures T and frequencies Ï? and a slight decreasing for different chemical potential ?¼. Also we have obtained the temperature dependence of ?º for different frequencies, chemical and bias potentials, that we saw a dramatically decrease in all of them. The plot of ?º versus chemical potential leads to a minimum value for ?º at ?¼ > t|| (in-plane hopping) for different T and V.
Email: m.yarmohammadi69@gmail.com
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report