Electrical spin injection and detection in molybdenum disulfide multilayer channel

9^th World Congress on Materials Science and Engineering

June 12-14, 2017 Rome, Italy

Henri Jaffres

Scientific Research National Center (CNRS), France

Scientific Tracks Abstracts: J Material Sci Eng

Abstract :

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic and spintronic applications. However, the demonstration of an electron spin transport through ferromagnetic source and drain connecting a semiconducting MoS2 channel remains challenging. Here, the author will present the experimental evidence of the electrical spin-injection and spin-detection in the conduction band of a multilayer MoS2 semiconducting channel using a two terminal spin-valve configuration geometry. A magnetoresistance around 1% have been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunneling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane magnetization and spin-polarization. The long spin-diffusion length (approximately 235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. In this talk, corollary to experiments, I will particularly emphasize on the mechanism of spin-injection at interfaces between a spin-polarized tunnel junction and a semiconductor channel, homogeneous or not. The latter can be composed of several regions, uniformly doped or depleted to form a Schottky contact and possibly location of a conduction made by hopping. I will extend the conditions for spin-injection from a spin- polarized ferromagnetic source into a Schottky contact on the ground of the experiments observed with success on MoS2 systems.

Biography :

Henri Jaffrès completed his PhD in the Physics department of the National Institute of Applied Sciences (INSA), University Toulouse III, France, in 1999. He joined the Joint Physics Unit CNRS-Thales, France as a Post-doctoral Fellow (2000–2001). His work focuses on spintronics, spin injection, spin transport, and spin transfer in semiconductor spintronics devices with electrical and optical detection in III-V heterostructures, as well as spin-hall effect and spin-pumping in group IV semiconductors.

Email: henri.jaffres@cnrs-thales.fr