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Extended short wave infrared photodetectors
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Journal of Lasers, Optics & Photonics

ISSN: 2469-410X

Open Access

Extended short wave infrared photodetectors


8th International Conference and Exhibition on Lasers, Optics & Photonics

November 15-17, 2017 | Las Vegas, USA

Doron Cohen Elias

Soreq NRC, Israel

Scientific Tracks Abstracts: J Laser Opt Photonics

Abstract :

Extended short wave infrared (eSWIR) photodetectors are used in night vision applications which detect reflected night glow and black body radiation. They also detect atmospheric gases which have high absorption coefficient between 2.5 and 3 �µm wavelengths. Type II superlattice (T2SL) epi-structures grown on GaSb and InP substrates, with flexible cut-off wavelength ranging between 2 to 3 �µm and a homogenous InPSb layer, lattice matched to a GaSb substrate, with a photoluminescence peak at 2.9 �µm, are candidate technologies for eSWIR detectors. In this study, we fabricated and characterized photodetectors based on three different technologies: T2SL InAs/AlSb, T2SL InGaAs/GaAsSb and InPSb. The epi-grown layers were characterized using photoluminescence (PL) and high resolution XRD (HRXRD) tools and the photodetectors performances were measured and compared using semiconductor device parameter analyzer, Fourier transform infrared (FTIR) and Black Body tools.

Biography :

Doron Cohen Elias has completed his PhD from Technion, Israel Institute of Technology. From 2012 to 2014, he was a Post-doctoral at the University of California Santa Barbara (UCSB). Since September 2014, he is a Research Scientist with the Nuclear Research Center, Soreq (Soreq NRC). He has published more than 30 publications in reputed journals and conferences.
 

Google Scholar citation report
Citations: 279

Journal of Lasers, Optics & Photonics received 279 citations as per Google Scholar report

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