Interface-Controlled resistive switching behavior of molybdenum oxide semiconductor

Joint Event on 3^rd World Chemistry Conference & World Congress on Biotherapeutics and Bioanalytical Techniques

September 11-12, 2017 Dallas, USA

Chih-Chieh Hsu, Siang-Yu Wang and Yu-Sheng Lin

National Yunlin University of Science and Technology, Taiwan

Scientific Tracks Abstracts: Chem Sci J

Abstract :

Floating gate memory has been widely used in non-volatile data storage, because it has fast data write/read capability, high-capacity storage, low-power consumption, and high endurance. However, recently, resistive random access memory (RRAM) has been proposed to be a new candidate for nonvolatile memory device technology, because it not only has the advantages that are mentioned above but also has a lower production cost than that of a floating gate memory due to its simple metal semiconductor metal (MSM) structure. This study demonstrated a high-performance interface-controlled MoOx RRAM fabricated by using a radio-frequency (RF) sputter. A glass substrate was firstly cleaned by ultrasonic agitation in acetone, ethanol and de-ionized water, respectively. Then, Pt was deposited as a bottom electrode and a molybdenum oxide thin film was subsequently deposited by RF sputtering a MoO3 target at oxygen flow rates of 0, 6, 9, 12,15 sccm. The argon flow rate was 12 sccm, the RF power was 40 W, and the working pressures was 3��10-3 torr. Finally, Al top electrodes were deposited on the MoOx layer by evaporation and patterned by a shadow mask. The MoO3 RRAM exhibits a significant memory window of 102 for 500 operations. The resistive switching mechanism was found to be dominated by formation/dissociation of an interfacial AlOx layer between Al electrode and MoOx active layer. The carrier transport mechanism was also investigated. The morphologies and thicknesses of the MoOx films were measure by using a scanning electron microscope (SEM). An X-ray diffraction (XRD) was employed to examine the crystallinity of the MoOx films. A UV-visible spectroscopy was used to study the transparency and the optical band gap. chemical structures of MoOx films were clarified by using X-ray photoelectron spectroscopy (XPS). This approach can be applied to future high-performance RRAM technology.� 

Biography :

Chih-Chieh Hsu has his expertise in semiconductor process and semiconductor device physics. He has much experience in thin film transistors, resistive memories, and sol-gel processes. He has published 15 SCI journal papers in the past three years. This approach will be applicable to future high-performance semiconductor devices.
Email:cchsu@yuntech.edu.tw