Low-cost, high-performance, single-crystal-like device layers and controlled self-assembly of nanostructures within device layers for wide-ranging energy and electronic applications

9^th World Congress on Materials Science and Engineering

June 12-14, 2017 Rome, Italy

Amit Goyal

University at Buffalo, USA

Posters & Accepted Abstracts: J Material Sci Eng

Abstract :

For many energy and electronic applications, single-crystal-like materials offer the best performance. However, in almost all cases, fabrication of single-crystal form of the relevant material is too expensive. In addition, for many applications, very long or wide materials are required a regime not accessible by conventional single-crystal growth. This necessitates the use of artificially fabricated, large-area, single-crystal-like substrates suitable for heteroepitaxial growth of the relevant advanced material for the electronic or energy application in question. In this talk, details of the fabrication of such substrates will be provided. Heteroepitaxial growth of nanolaminate multilayers and devices on such substrates using a variety of deposition techniques such as pulsed laser ablation, sputtering, e-beam evaporation, MBE, MOCVD, and chemical solution deposition will be reported upon. Application areas that have been demonstrated via the use of such artificial substrates include � oxide high-temperature superconductors, semiconductor materials (Si, Ge, GaAs, CdTe and Cu2O), ferroelectrics (BaTiO3), multiferroics (BiFeO3), etc. In addition, strain-driven self-assembly of second phase nanomaterials at nanoscale spacing has been demonstrated within device layers. Control of heteroepitaxy in latticemismatched systems and the effects of strain on self-assembly will be discussed. Such heteroepitaxial device layers on large-area, single-crystal-like artificial substrates are quite promising for a range of electrical and electronic applications.

Biography :

Email: agoyal@buffalo.edu