Xiaosheng Fang
Fudan University, China
Posters & Accepted Abstracts: J Material Sci Eng
During the past few decades, we have witnessed that the booming photoelectronic industry has transformed the world and stretched throughout every facet of our lives. As one of the most important optoelectronic devices, photodetectors, which possess the ability to transform light into electrical signals precisely, have been capturing intensive attention. Lowdimensional nanostructures are ideal systems for constructing high-performance photodetectors due to their tailored geometries, high surface-area-to-volume ratios and rationally designed surfaces. Up to now, various sophisticated techniques, such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD) and magnetron sputtering have been developing rapidly, which has provided vast opportunities for thin-film based materials, especially GaN and GaAs based photodetectors, to be successfully commercialized. However, fabricating photodetectors focusing on the aforementioned techniques usually requires high operating costs, which will hamper further scale-up production of such photo electric devices. Therefore, it is of great importance to explore novel and facile techniques for fabricating high-performance photodetectors with low cost. In this talk, we will present the latest progress, the current challenges and an outlook on the future developments of low-dimensional nanostructures based highperformances photodetectors.
Email: xshfang@fudan.edu.cn
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report