Mid-infrared active scanning imaging with PbSnTe wavelength-tunable laser diodes grown via liquid-phase epitaxy

4^th International Conference on Photonics & Laser Technology

July 28-29, 2016 Berlin, Germany

Arata Yasuda

National Institute of Technology, Japan

Posters & Accepted Abstracts: J Laser Opt Photonics

Abstract :

n-PbTe/p-PbSnTe/p-PbTe double-hetero (DH) diode structures on p-PbTe substrates were developed using the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE), which is a unique technique for stoichiometry control. We obtained high-quality PbTe or PbSnTe epitaxial layers and high-resolution tunable mid-infrared laser diodes (LDs) using this method. The lasing wavelength obtained by varying the ambient temperature of the diode was between 7.2 (1390 cmâ��1) and 9.4 �¼m (1070 cmâ��1). As its application in our previous study, we obtained a clear contrast absorbance image between the different resistivities Si wafers, some organic samples like benzoic acid (BA) or para-nitrobenzoic acid (PNBA) with the PbSnTe LDs. In the present study, we investigated the resolution of the PbSnTe mid-infrared laser active imaging systems. In addition, we introduced the results of some unique mid-infrared imaging for organisms. We use chicken liver and clover leaves as examples for medical application of imaging systems in the future.

Biography :

Email: y-arata@tsuruoka-nct.ac.jp