Modeling and simulation of radiation effects on charge coupled devices induced by proton and neutron beams

International Conference on Nuclear Chemistry

December 08-09, 2016 San Antonio, USA

Zujun Wang

Northwest Institute of Nuclear Technology, China

Posters & Accepted Abstracts: J Nucl Med Radiat Ther

Abstract :

Charge coupled devices (CCDs) have extensive applications in particle detection, space mission, medical imaging, and nuclear industry. However, the CCDs used in these particular applications are susceptible to radiation damage. The radiation-induced damages can be separated into two phenomena: ionization damage effects and displacement damage effects. Ionizing damage induces an increase in trapped oxide charges and bulk-oxide interface traps which cause an increase in surface dark signals and dark signal non-uniformity (DSNU) of the CCDs. Displacement damage caused by energetic particles such as protons or neutrons induces stable bulk traps with energy levels within the band-gap which can lead to the degradations on the CCDs. Fewer studies have focused on the details of simulation results and with generally only limited information about modeling and simulation process. A method is presented for modeling and simulation of radiation effects on CCDs irradiated by proton and neutron beams. The device model, clock pulse driver circuit models, radiation effect models, and solution methods are described in detail. The mechanism of dark signal and charge transfer inefficiency (CTI) increase, induced by proton radiation is analyzed. The proton radiation modeling is established to simulate the degradation of dark signal and CTI in a CCD by the device simulator. The simulation results show that the CTI increase induced by protons is mainly due to the trap with energy level of Ec-0.42eV (E centers) and the total dark signal increase is dominated by the surface dark signal increase. The mechanism of CTI increase induced by neutron radiation is analyzed. The neutron radiation modeling is established to simulate the CTI degradation in a CCD. The tendencies of the simulation results are in agreement with the experimental results of the correlative literatures.

Biography :

Email: wangzujun@nint.ac.cn