Mushahid Husain
M J P Rohilkhand University, India
Posters & Accepted Abstracts: J Material Sci Eng
Graphene is a two dimensional structure of sp2 hybridised carbon atoms arranged in a hexagonal honeycomb like pattern. Its extraordinary and exciting electrical, optical and mechanical properties have made it a focal point of contemporary research in material science and have earned it the status of wonder material of 21st century. Our objective is to synthesis graphene sheets in a controlled manner in terms of number of layers and to observe for its properties like electrical conductivity, absorbance, transmittance and field emission which could be exploited in development of modern age opto-electronic devices. We have successfully synthesised high quality graphene on copper (Cu) coated silicon (Si) substrate at very large area using plasma enhanced chemical vapour deposition (PECVD) method at temperature as low as 600�°C. SEM and TEM images showed the surface morphology of as grown samples is quite uniform having single layered graphene (SLG) to few layered graphene (FLG). The G and Gâ�� peaks of stokes phonon energy shift obtained in Raman spectroscopy confirmed that the sample consisted of a number of SLGâ��s and FLGâ��s. The field emission characteristics of as-grown graphene samples studied in planar diode configuration at room temperature depict that the as grown graphene is good field emitter with low turn-on field, higher field amplification factor and long term emission current stability. Other techniques such as low pressure chemical vapour deposition (LPCVD) and modified Hummerâ��s methods have also been employed for successful synthesis of graphene and r-GO (reduced graphene oxide). The optical studies of these samples show that our samples had more than 90% optical transparency to visible light making it useful for opto-electronic applications.
Email: mush_phys@rediffmail.com
Journal of Material Sciences & Engineering received 3677 citations as per Google Scholar report