The influence of the doping level of InP on the porous layer

2^nd International Conference and Exhibition on Materials Science & Engineering

October 07-09, 2013 Hampton Inn Tropicana, Las Vegas, NV, USA

Suchikova Yana

Accepted Abstracts: J Material Sci

Abstract :

Recently, scientific interest is directed to the formation of nanostructures considered as a promising material for the creation of photon devices. The electrochemical process, which is unique due to its simplicity, low process temperature and low cost, stands out against different formation techniques of semiconductor nanostructures. The most well-known application of the electrochemical methods is the formation of a porous layer on the surface of semiconductor plate by anode etching. Rate of a chemical reaction essentially depends on the doping level of the semiconductor. Results of the performed study confirm the assumption that the concentration of impurity charge carriers of the semiconductor plays fundamental role for the porous layer formation on the surface. It is shown that in order the electrochemical process of InP etching is accompanied by the active pore-formation, it is necessary to use crystals with sufficiently high doping level.

Biography :

Suchikova Yana is the Senior Lecturer of the department of teaching physical and mathematical disciplines and information technology in education from Berdyansk State Pedagogical University. She has published more than 100 papers, of which are 20 articles, 3 monograph, 11 patents, abstracts and proceedings conferences. Her achievements include grant of the Cabinet of Ministers of Ukraine for young scientists; Victory in All-Ukrainian competition ?Inventions - 2010? in absolute nomination "Best invention - 2010"; Diploma finalist Festival of Innovative projects "Sykorsky Challenge"; Winner of the prize of Leonid Kuchma?s President Fund.